Department "Semiconductor Physics & Nanoelectronics"

Russian version

Dmitry Firsov, Professor, Doctor of Physics and Mathematics

1977 graduated with honor from Leningrad Polytechnic Institute (now St. Petersburg State Polytechnic University).

1978 1990 researcher and senior researcher at Leningrad Polytechnic Institute.

1984 defended the thesis called Optical Phenomena in Semiconductors Under Carrier Drift and Heating and got the Candidate of Science (PhD) degree.

1990 1991 senior researcher at Leningrad Polytechnic Institute.

1991 2000 works as an Associate Professor at the St. Petersburg State Technical University (former Leningrad Polytechnic Institute, now St. Petersburg State Polytechnic University).

2000 defended the thesis called "Optical Phenomena in Semiconductors and Semiconductor Nanostructures connected with nonequilibrium free carriers" and got the Doctor of Physics and Mathematics (DSc) degree

2000 present time works as a Professor at the St. Petersburg State Polytechnic University

Courses of lectures

  • Optical and photoelectric phenomena in semiconductors
  • Physics of semiconductor devices
  • Photonics
  • Low-dimensional systems
  • Optical properties of semiconductor nanostructures

The main field of research interests

  • Optical phenomena connected with free carriers in semiconductors and optoelectronic devices based on low-dimensional structures with quantum dots, quantum wells and impurities. Semiconductor lasers.

  • Joint researches in frames of German-Russian Center for Terahertz Science and Technology combining six groups from University of Regensburg (2 groups); Ioffe Physical-Technical Institute, St. Petersburg (2 groups); St. Petersburg State Polytechnical University and Lomonosov Moscow State University.

Collaborations

Selected publications 2003 - 2008

  • V.E.Gasumyanz, D.A.Firsov. Electrons and phonons in low-dimensional systems (in Russian). St. Petersburg, Polytechnic University, 2008. 96 p.
  • L.E.Vorobjev, D.A.Firsov, V.A.Shalygin, V.Yu.Panevin, A.N.Sofronov, V.M.Ustinov, A.E.Zhukov, A.Yu.Egorov, A.V.Andrianov, A.O.Zakhar'in, S.D.Ganichev, S.N.Danilov, D.V.Kozlov. Terahertz luminescence and absorption under Impurity Breakdown in quantum wells and strained semiconductor layers. Acta Physica Polonica (A), vol. 113, No.3, pp.925-928 (2008)
  • V.A.Shalygin, L.E.Vorobjev, D.A.Firsov, V.Yu.Panevin, A.N.Sofronov, A.V.Andrianov, A.O.Zakhar'in, A.Yu.Egorov, A.G.Gladyshev, O.V.Bondarenko, V.M.Ustinov, N.N.Zinov'ev, D.V.Kozlov. Terahertz luminescence in strained GaAsN:Be layers under strong electric fields. Applied Physics Letters, v. 90, Iss. 16, 161128 (2007).
  • L.E.Vorobjev, N.K.Fedosov, V.Yu.Panevin, D.A.Firsov, V.A.Shalygin, M.I.Grozina, A.Andreev, V.M.Ustinov, I.S.Tarasov, N.A.Pikhtin, Yu.B.Samsonenko, A.A.Tonkikh, G.E.Cirlin, V.A.Egorov, F.H.Julien, F.Fossard, A.Helman, Kh.Moumanis. Interband light absorption and Pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells. Semicond. Sci. Technol. v.22, pp.814-818 (2007)
  • L.E.Vorobjev, V.Yu.Panevin, N.K.Fedosov, D.A.Firsov, V.A.Shalygin, A.Seilmeier, S.R.Schmidt, E.A.Zibik, E.Towe, V.V.Kapaev. Carrier transfer in coupled asymmetric GaAs/AlGaAs double quantum wells after ultrafast intersubband excitation. Semicond. Sci. Technol. v.21 pp.1267-1273 (2006).
  • L.E.Vorobjev, D.A.Firsov, V.A.Shalygin, N.K.Fedosov, V.Yu.Panevin, A.Andreev, V.M.Ustinov, G.E.Cirlin, V.A.Egorov, A.A.Tonkikh, F.Fossard, M.Tchernycheva, Kh.Moumanis, F.H.Julien, S.Hanna, A.Seilmeier, H.Sigg. Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells. Semicond. Sci. Technol. v.21 pp.1341-1347 (2006)
  • L.E.Vorobev, V.Yu.Panevin, N.K.Fedosov, D.A.Firsov, V.A.Shalygin, V.V.Kapaev, S.Hanna, S.Schmidt, E.A.Zibik, A.Seilmeier. Intersubband absorption of light in heterostructures with double tunnel-coupled GaAs/AlGaAs quantum wells. Semiconductors, v.39, No.1, pp.41-43 (2005).
  • L.E.Vorobev, V.Yu.Panevin, N.K.Fedosov, D.A.Firsov, V.A.Shalygin, A.A.Andreev, Yu.B.Samsonenko, A.A.Tonkikh, G.E.Cirlin, N.V.Kryzhanovskaya, V.M.Ustinov, S.Hanna, A.Seilmeier, N.D.Zakharov, P.Werner. Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules. Semiconductors, v.39, No.1, pp.50-53 (2005).
  • S.Hanna, A.Seilmeier, V.A.Shalygin, D.A.Firsov, L.E.Vorobjev, V.M.Ustinov, A.E.Zhukov. Dynamics and collective properties of non-equilibrium carriers in highly photoexcited quantum wells. Semiconductor Science and Technology, v.19, pp.S290-S292 (2004).
  • S.Hanna, S.R.Schmidt, V.A.Shalygin, D.A.Firsov, L.E.Vorobjev, V.M.Ustinov, A.E.Zhukov, A.Seilmeier. Intersubband absorption in highly photoexcited semiconductor quantum wells. Physica E, v.19, p.364-371 (2003).
  • A.Seilmeier, S.Hanna, V.A.Shalygin, D.A.Firsov, L.E.Vorobjev, V.M.Ustinov, A.E.Zhukov. Intersubband spectroscopy in quantum well structures at high nonequilibrium carrier densities. International Journal of Nanoscience, v.2, No. 6, pp.445-451 (2003).
  • V.A.Shalygin, L.E.Vorobjev, V.Yu.Panevin, D.A.Firsov, S.Hanna, H.Knieling, A.Seilmeier, E.M.Araktcheeva, N.V.Kryzhanovskaya, A.G.Gladyshev, A.E.Zhukov, and V.M.Ustinov. Excited state photoluminescence in stepped InGaAs/AlGaAs quantum wells under picosecond excitation. International Journal of Nanoscience, v.2, No. 6, pp.427-435 (2003)
  Contacts
  Polytechnicheskaya str., 29
St. Petersburg 195251, Russia
Tel.: +7-812-552-9671
Fax: +7-812-533-4717
E-mail: dmfir@rphf.spbstu.ru