Department "Semiconductor Physics & Nanoelectronics"

Russian version

Dmitry Firsov, Professor, Doctor of Physics and Mathematics

1977 – graduated with honor from Leningrad Polytechnic Institute (now St. Petersburg State Polytechnic University).

1978 – 1990 researcher and senior researcher at Leningrad Polytechnic Institute.

1984 – defended the thesis called “Optical Phenomena in Semiconductors Under Carrier Drift and Heating” and got the Candidate of Science (PhD) degree.

1990 – 1991 senior researcher at Leningrad Polytechnic Institute.

1991 – 2000 works as an Associate Professor at the St. Petersburg State Technical University (former Leningrad Polytechnic Institute, now St. Petersburg State Polytechnic University).

2000 – defended the thesis called "Optical Phenomena in Semiconductors and Semiconductor Nanostructures connected with nonequilibrium free carriers" and got the Doctor of Physics and Mathematics (DSc) degree

2000 – present time works as a Professor at the St. Petersburg State Polytechnic University

Courses of lectures

• Optical and photoelectric phenomena in semiconductors
• Physics of semiconductor devices
• Photonics
• Low-dimensional systems
• Optical properties of semiconductor nanostructures

The main field of research interests

• Optical phenomena connected with free carriers in semiconductors and optoelectronic devices based on low-dimensional structures with quantum dots, quantum wells and impurities. Semiconductor lasers.

• Joint researches in frames of German-Russian Center for Terahertz Science and Technology combining six groups from University of Regensburg (2 groups); Ioffe Physical-Technical Institute, St. Petersburg (2 groups); St. Petersburg State Polytechnical University and Lomonosov Moscow State University.

Collaborations

Aalto University, Espoo, Finland. The Nanotechnology group of Prof. Harri Lipsanen
German-Russian Terahertz Center, Regensburg. Laboratory of Prof. Sergey Ganichev

Selected publications 2003 - 2008

• V.E.Gasumyanz, D.A.Firsov. Electrons and phonons in low-dimensional systems (in Russian). St. Petersburg, Polytechnic University, 2008. 96 p.
• L.E.Vorobjev, D.A.Firsov, V.A.Shalygin, V.Yu.Panevin, A.N.Sofronov, V.M.Ustinov, A.E.Zhukov, A.Yu.Egorov, A.V.Andrianov, A.O.Zakhar'in, S.D.Ganichev, S.N.Danilov, D.V.Kozlov. Terahertz luminescence and absorption under Impurity Breakdown in quantum wells and strained semiconductor layers. Acta Physica Polonica (A), vol. 113, No.3, pp.925-928 (2008)
• V.A.Shalygin, L.E.Vorobjev, D.A.Firsov, V.Yu.Panevin, A.N.Sofronov, A.V.Andrianov, A.O.Zakhar'in, A.Yu.Egorov, A.G.Gladyshev, O.V.Bondarenko, V.M.Ustinov, N.N.Zinov'ev, D.V.Kozlov. Terahertz luminescence in strained GaAsN:Be layers under strong electric fields. Applied Physics Letters, v. 90, Iss. 16, 161128 (2007).
• L.E.Vorobjev, N.K.Fedosov, V.Yu.Panevin, D.A.Firsov, V.A.Shalygin, M.I.Grozina, A.Andreev, V.M.Ustinov, I.S.Tarasov, N.A.Pikhtin, Yu.B.Samsonenko, A.A.Tonkikh, G.E.Cirlin, V.A.Egorov, F.H.Julien, F.Fossard, A.Helman, Kh.Moumanis. Interband light absorption and Pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells. Semicond. Sci. Technol. v.22, pp.814-818 (2007)
• L.E.Vorobjev, V.Yu.Panevin, N.K.Fedosov, D.A.Firsov, V.A.Shalygin, A.Seilmeier, S.R.Schmidt, E.A.Zibik, E.Towe, V.V.Kapaev. Carrier transfer in coupled asymmetric GaAs/AlGaAs double quantum wells after ultrafast intersubband excitation. Semicond. Sci. Technol. v.21 pp.1267-1273 (2006).
• L.E.Vorobjev, D.A.Firsov, V.A.Shalygin, N.K.Fedosov, V.Yu.Panevin, A.Andreev, V.M.Ustinov, G.E.Cirlin, V.A.Egorov, A.A.Tonkikh, F.Fossard, M.Tchernycheva, Kh.Moumanis, F.H.Julien, S.Hanna, A.Seilmeier, H.Sigg. Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells. Semicond. Sci. Technol. v.21 pp.1341-1347 (2006)
• L.E.Vorob’ev, V.Yu.Panevin, N.K.Fedosov, D.A.Firsov, V.A.Shalygin, V.V.Kapaev, S.Hanna, S.Schmidt, E.A.Zibik, A.Seilmeier. Intersubband absorption of light in heterostructures with double tunnel-coupled GaAs/AlGaAs quantum wells. Semiconductors, v.39, No.1, pp.41-43 (2005).
• L.E.Vorob’ev, V.Yu.Panevin, N.K.Fedosov, D.A.Firsov, V.A.Shalygin, A.A.Andreev, Yu.B.Samsonenko, A.A.Tonkikh, G.E.Cirlin, N.V.Kryzhanovskaya, V.M.Ustinov, S.Hanna, A.Seilmeier, N.D.Zakharov, P.Werner. Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules. Semiconductors, v.39, No.1, pp.50-53 (2005).
• S.Hanna, A.Seilmeier, V.A.Shalygin, D.A.Firsov, L.E.Vorobjev, V.M.Ustinov, A.E.Zhukov. Dynamics and collective properties of non-equilibrium carriers in highly photoexcited quantum wells. Semiconductor Science and Technology, v.19, pp.S290-S292 (2004).
• S.Hanna, S.R.Schmidt, V.A.Shalygin, D.A.Firsov, L.E.Vorobjev, V.M.Ustinov, A.E.Zhukov, A.Seilmeier. Intersubband absorption in highly photoexcited semiconductor quantum wells. Physica E, v.19, p.364-371 (2003).
• A.Seilmeier, S.Hanna, V.A.Shalygin, D.A.Firsov, L.E.Vorobjev, V.M.Ustinov, A.E.Zhukov. Intersubband spectroscopy in quantum well structures at high nonequilibrium carrier densities. International Journal of Nanoscience, v.2, No. 6, pp.445-451 (2003).
• V.A.Shalygin, L.E.Vorobjev, V.Yu.Panevin, D.A.Firsov, S.Hanna, H.Knieling, A.Seilmeier, E.M.Araktcheeva, N.V.Kryzhanovskaya, A.G.Gladyshev, A.E.Zhukov, and V.M.Ustinov. Excited state photoluminescence in stepped InGaAs/AlGaAs quantum wells under picosecond excitation. International Journal of Nanoscience, v.2, No. 6, pp.427-435 (2003)

Contacts
	Polytechnicheskaya str., 29 St. Petersburg 195251, Russia Tel.: +7-812-552-9671 Fax: +7-812-533-4717 E-mail: dmfir@rphf.spbstu.ru